鐜嬬殦瀹佺畝浠?鐢靛瓙淇℃伅宸ョ▼瀛﹂櫌-凯发国际官方网站入口

鐜嬬殦瀹?span lang="en-us">(璁插笀)

鏁欏笀鑳屾櫙

鐮旂┒棰嗗煙

涓昏鐮旂┒鏂瑰悜涓哄崐瀵间綋鍏夌數瀛愬櫒浠剁殑璁捐涓庣爺鍒讹紝鍖呮嫭鐢佃嚧鍙戝厜鍣ㄤ欢銆佸厜鎺㈡祴鍣ㄤ欢銆佸厜浼忓櫒浠剁瓑銆?/span>

鐮旂┒鎴愭灉

(1) h. tao, h. n. wang*, y. c. bai, h. y. zhao, q. m. fu, z .b. ma, h. long, efficient photodiode-type photodetectors with perovskite thin films derived from an mapbi3 single-crystal precursor, journal of materials chemistry c 2020, 8: 6228

(2) j. e. li, w. b. li, j. h. gu, z. y. zhong, c. y. yang, j. hou, h. tao, j. l. du, x. d. li, l. j. xu, s. g. wan, h. long*, h. n. wang*, carrier transport improvement in zno/mgzno multiple-quantum-well ultraviolet light-emitting diodes by energy band modification on mgzno barriers, optics communications 2020 459: 124978.

(3) h. tao, h. n. wang*, y. c. bai, h. long, h. y. zhao, q. m. fu, z. b. ma, effects of sputtering power of sno2 electron selective layer on perovskite solar cells. journal of materials science: materials in electronics 2019, 30(13): 12036

(4) h. n. wang, h. long, z. chen, x. m. mo, s. z. li, z. y. zhong, g. j. fang, fabrication and characterization of alternating-current-driven zno-based ultraviolet light-emitting diodes. electronic materials letters 2015, 11(4): 664-669

(5) h. n. wang, h. long, x. m. mo, z. chen, s. z. li, h. h. huang, y. p. liu, g. j. fang, near white electroluminescence from self-supporting zno nanocone array based heterojunction light-emitting diodes. materials research express 2015, 2(03): 035005.

(6) h. n. wang, g. j. fang, h. long, s. z. li, x. m. mo, h. h. huang, h. zhou, x. z. zhao, ultraviolet electroluminescence properties of the p-nio/n-gan-based heterojunction diodes. semiconductor science and technology 2011, 26 (12): 125015.

鐮旂┒椤圭洰

1.鍥藉鑷劧绉戝鍩洪噾闈掑勾鍩洪噾椤圭洰锛屽熀浜庣數鑽烽潪瀵圭о璋愭尟闅х┛缁撴瀯鐨勬哀鍖栭攲鍩哄彂鍏変簩鏋佺鐮旂┒锛屼富鎸侊紝2018-2020

2.鍥藉鑷劧绉戝鍩洪噾闈笂椤圭洰锛屾哀鍖栭攲闀佸绂佸甫鍗婂浣?span lang="en-us">pin寮傝川缁?span lang="en-us">x灏勭嚎鎺㈡祴鍣紝鍙備笌锛?span lang="en-us">2021-2024

鑱旂郴鏂瑰紡

閭锛?/span>whn@mail.scuec.edu.cn

鍦板潃锛氫腑鍗楁皯鏃忓ぇ瀛︾數瀛愪俊鎭伐绋嬪闄?/span>

娆㈣繋鏈夊織闈掑勾鍔犲叆鏈棰樼粍鏀昏纭曞＋鐮旂┒鐢燂紒